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Integrated Circuits
Altera
Stratix EP1S25B672C6ES PLD Structural Analysis SAR-0301-001
TSMC's latest process - 9 layers of copper metallization and
0.13 µm technology.
Samsung
K9K2G08U0M-YCB000 2Gb Flash Memory Structural Analysis SAR-0302-002
The Samsung K9K2G08U0M-YCB000 is a 2112 Mbit NAND Flash memory.
The NAND cell provides a cost-effective solution for the solid-state
mass storage market. The device is dual 1Gb NAND chip in a
single package. The device was reportedly manufactured in
a 0.18µm CMOS process, with the actual gates measuring
0.13µm.
Intel
GDPXA250B2C400 Applications Processor Structural Analysis
SAR-0303-007
The Intel GDPXA250B2C400 is a low power, high performance
32 bit RISC microprocessor compliant with the ARM™ v.5TE
architecture. This 400 MHz processor uses Intel’s X-scale
technology to achieve high core speeds at low power. It is
manufactured in 0.18µm 6 metal notched gate technology
with a 6T SRAM array.
Panasonic
P2101V CMOS Image Sensor Structural Analysis SAR-0302-005
CMOS color image sensor structural analysis from Panasonic
P2101V 3G W-CDMA FOMA Cell Phone made in a 3 metal, 2 poly
silicon technology. The device is a full-color 367x290 pixel
CMOS image sensor. Equipped with an embedded camera that consists
of the CMOS image sensor and an image processor.
Infineon
HYB25D128800AT-7 128M DDR SDRAM Structural Analysis SAR-0301-004
The Infineon HYB25D128800AT-7 128M DDR SDRAM was fabricated
using a trench DRAM design in 0.18µm technology. The
device was packaged in a 66-pin 400 mil plastic TSOP (type
II) package with gull-wing leads for surface mount applications.
Sharp
IR3E11M TFT LCD Gray Scale Driver Structural Analysis SAR-0210-003
With a built-in high current common amplifier, the TFT LCD
Scale Reference Voltage IC compensates non-linearity transmittance
characteristic of a LCD panel by providing a high quality
of reference voltage. It has a 2 metal bipolar process.
Sharp
LH168T11 TFT LCD Source Driver Structural Analysis SAR-0210-004
The Sharp LH168T11 Display Driver was mounted on a tape substrate
with a molding compound. The device is manufactured in a 0.5µm
CMOS process with two levels of aluminum metallization and
one level of polycide.
RF
and Power Devices
Philips
BLF2022-90 UHF Power LDMOS Transistor Structural Analysis
SAR-0304-001
90W lateral diffusion (LD) MOS power transistor designed for
common source class-AB operation applicable in the 2000 to
2200 MHz frequency range, W-CDMA, CDMA and multi-carrier application,
base station application at frequencies from 211- to 2170
MHz.
Infineon/Ericsson
PTF102015 GOLDMOS Field Effect Transistor Structural Analysis
SAR-0302-001
The Infineon PTF102015 is a 30-watt internally matched GOLDMOS
FET intended for WCDMA applications from 2110 to 2170MHz.
Ultra
RF UGF21090F Power MOSFET Structural Analysis SAR-0301-002
The Ultra RF UGF21090FE is a 90W, 2.17 GHz, Broadband RF Power
N-channel Enhancement-Mode Lateral Diffusion MOSFET.
Toshiba
SFOR5J43 Silicon Planar Thyristor Structural Analysis SAR-0302-004
The Toshiba SFOR5J43 Thyristor was designed for low power
switching and control applications.
MEMS
Device
ST
Microelectronics LIS2L02AS 2-Axis/1g Acceleration Sensor Structural
Analysis SAR-0304-010
The LIS2L02 device senses inclination in both the side-to-side
(roll) and forward-backward (pitch) directions, allowing the
sensing of acceleration or inclination in two directions,
such as anti theft systems, industrial production equipment,
robotic toys and automotive electronics. This is a detailed
analysis of the MEM sensor in the device.
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